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Proceedings Paper

Novel lithography rule check for full-chip side lobe detection
Author(s): T. S. Wu; Elvis Yang; T. H. Yang; K. C. Chen; C. Y. Lu
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Paper Abstract

Attenuated PSM (Phase Shift Mask) has been widely adopted in contact lithography to enhance the resolution and process latitude. While the main drawback associated with the use of attenuated PSM is the side lobe printing, which yields unwanted resist erosion of area among patterned holes. Side lobes, if etched and filled in the following semiconductor processing, can cause electrical shorting, chip failure and device reliability problem, hence any side lobes are extremely undesirable. Usually, the side lobe detection for simple layouts can be conducted manually through the help of lithography simulation tools, but the detection of potential side lobe printing becomes far more challenging for full-chip production layouts. An efficient side-lobe detection approach was demonstrated in this study, with the use of assistant ring, polygon-based simulation instead of grid-based simulation has been enabled for full-chip side lobe detection. Furthermore, a model-based method for side lobe suppression was also demonstrated in our flow.

Paper Details

Date Published: 7 March 2008
PDF: 8 pages
Proc. SPIE 6924, Optical Microlithography XXI, 692431 (7 March 2008); doi: 10.1117/12.770882
Show Author Affiliations
T. S. Wu, Macronix International Co., Ltd. (Taiwan)
Elvis Yang, Macronix International Co., Ltd. (Taiwan)
T. H. Yang, Macronix International Co., Ltd. (Taiwan)
K. C. Chen, Macronix International Co., Ltd. (Taiwan)
C. Y. Lu, Macronix International Co., Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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