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Proceedings Paper

304 mW green light emission by frequency doubling of a high-power 1060-nm DBR semiconductor laser diode
Author(s): Hong Ky Nguyen; Martin H. Hu; Yabo Li; Kechang Song; Nick J. Visovsky; Sean Coleman; Chung-En Zah
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Paper Abstract

We report for the first time, to the best of our knowledge, 304 mW green light emission generated by frequency doubling of the output from a 1060-nm DBR semiconductor laser using a periodically poled MgO-doped lithium niobate waveguide in a compact single-pass configuration. The excellent performance of these DBR lasers, including a kink-free power greater than 750 mW, single-spatial-mode output beam, single-wavelength emission spectra, and high wavelength-tuning efficiency, plays an important role in the generation of high-power green light.

Paper Details

Date Published: 5 February 2008
PDF: 6 pages
Proc. SPIE 6890, Optical Components and Materials V, 68900I (5 February 2008); doi: 10.1117/12.770678
Show Author Affiliations
Hong Ky Nguyen, Corning Inc. (United States)
Martin H. Hu, Corning Inc. (United States)
Yabo Li, Corning Inc. (United States)
Kechang Song, Corning Inc. (United States)
Nick J. Visovsky, Corning Inc. (United States)
Sean Coleman, Corning Inc. (United States)
Chung-En Zah, Corning Inc. (United States)


Published in SPIE Proceedings Vol. 6890:
Optical Components and Materials V
Michel J. F. Digonnet; Shibin Jiang; John W. Glesener; J. Christopher Dries, Editor(s)

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