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Proceedings Paper

In-line inspection resistance mapping using quantitative measurement of voltage contrast in SEM images
Author(s): Miyako Matsui; Yoshihiro Anan; Takayuki Odaka; Hiroshi Nagaishi; Koichi Sakurai
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Paper Abstract

We developed an in-line inspection method for partial-electrical measurement of contact resistance, which is quantitatively estimated from the voltage contrast formed in an SEM image of an incomplete-contact defect. At first, standard calibration wafers were manufactured for the voltage-contrast calibration. The contact resistance of systematically formed defects was varied from 108 to 1017 ohms. We quantitatively analyzed the grayscale of these defect images captured by a review SEM. Then, the relationship between the grayscales of the defect images captured from these standard calibration wafers and the contact resistances of the defects was studied. We obtained a uniform, stable grayscale of the SEM images of each standard calibration wafer. As a result, calibration curves for estimating the contact resistance of the incomplete-contact defect were obtained at a probe current condition of 80 pA and charging voltages of 1 and 2 V. The estimated contact resistance under these inspection conditions was between 1010 and 1016 ohms. Using this in-line inspection method, we demonstrated wafer mapping of contact resistances calibrated from grayscales of defect patterns. We could not determine whether contact resistances on a wafer widely varied unless we used this method.

Paper Details

Date Published: 24 March 2008
PDF: 8 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 692218 (24 March 2008); doi: 10.1117/12.769288
Show Author Affiliations
Miyako Matsui, Hitachi, Ltd. (Japan)
Yoshihiro Anan, Hitachi, Ltd. (Japan)
Takayuki Odaka, Hitachi, Ltd. (Japan)
Hiroshi Nagaishi, Renesas Technology Corp. (Japan)
Koichi Sakurai, Renesas Technology Corp. (Japan)

Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

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