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Proceedings Paper

III-nitride based deep ultraviolet light sources
Author(s): M. S. Shur; R. Gaska
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Paper Abstract

We review the physics of deep UV LEDs with emphasis on the features that differ from those for visible LEDs. We discuss UV designs, novel growth process of light generating structures (MEMOCVDTM) that allows for reducing the growth temperature and improving materials quality, and "phonon engineering" approach that takes advantage of high polar optical energy in AlN/GaN/InN materials for confining electrons in the light emitting quantum wells. We then review the characteristics of DUV LEDs grown on sapphire substrates with peak emission wavelength from 250 to 340 nm that demonstrate the lowest optical noise among all other UV light sources and, therefore, are well suited for the detection of hazardous biological agents using fluorescence techniques. Finally, we describe high power multi-chip, multi-wavelength deep UV light sources and review emerging applications of deep UV LED technology.

Paper Details

Date Published: 15 February 2008
PDF: 8 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 689419 (15 February 2008); doi: 10.1117/12.769128
Show Author Affiliations
M. S. Shur, Rensselaer Polytechnic Institute (United States)
Sensor Electronic Technology, Inc. (United States)
R. Gaska, Sensor Electronic Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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