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Proceedings Paper

Synthesis and properties of new anionic photoacid generators bound polymer resists for e-beam and EUV lithography
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Paper Abstract

A new series of methacrylate substituted benzene sulfonic photoacid generators (PAGs) and a perfluoro alkanesulfonic PAG, bound polymeric resists based on hydroxystyrene (HS) and 2-ethyl-2-adamantyl methacrylate (EA) were prepared and characterized. The acid yield of these PAG bound polymer resists was among the range of 54-81% under deep ultraviolet exposure (254 nm) that agrees well with the electron withdrawing effect of the substituents on the PAG anion for enhancing acid generation efficiency. The intrinsic lithography performance of these polymer-bound PAG resists showed sub-50 nm half-pitch resolution and < 5 nm LER (3σ).

Paper Details

Date Published: 26 March 2008
PDF: 7 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692312 (26 March 2008); doi: 10.1117/12.769004
Show Author Affiliations
Mingxing Wang, The Univ. of North Carolina at Charlotte (United States)
Cheng-Tsung Lee, Georgia Institute of Technology (United States)
Clifford L. Henderson, Georgia Institute of Technology (United States)
Wang Yueh, Intel Corp. (United States)
Jeanette M. Roberts, Intel Corp. (United States)
Kenneth E. Gonsalves, The Univ. of North Carolina at Charlotte (United States)


Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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