Share Email Print

Proceedings Paper

Focus and dose control to actual process wafer
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have proposed a new inspection method of in-line focus and dose controls for semiconductor volume production. We referred to this method as the focus and dose line navigator (FDLN). Using FDLN, the deviations from the optimum focus and exposure dose can be obtained by measuring the topography of the resist pattern on a process wafer that was made under a single-exposure condition. Generally speaking, FDLN belongs to the technology of solving the inverse problem as scatterometry. The FDLN sequence involves following the two steps. Step 1:creating a focus exposure matrix (FEM) using a test wafer for building the model as supervised data. The model means the relational equation between the multi measurement results of resist patterns ( e.g. Critical dimension (CD), height, sidewall angle) and FEM's exposure conditions. Step 2: measuring the resist patterns on a production wafers and feeding the measurement data into the library to extrapolate focus and dose. In this time, we have evaluated the estimated accuracy of Focus and dose for actual process wafer using the advanced CD-SEM and we also have developed new algorithm for considering against thermal dose error.

Paper Details

Date Published: 22 March 2008
PDF: 8 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 692212 (22 March 2008); doi: 10.1117/12.768893
Show Author Affiliations
Hideki Ina, Canon Inc. (Japan)
Koichi Sentoku, Canon Inc. (Japan)

Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)

© SPIE. Terms of Use
Back to Top