Share Email Print

Proceedings Paper

Spectroscopic ellipsometry characterization of silicon/silicon-dioxide superlattices for photoluminescence and electroluminescence
Author(s): Tim Creazzo; Lindsay Prather; Brandon Redding; Shouyuan Shi; Dennis Prather
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Silicon based light emitting materials are of particular interest for integrating electric and photonic devices into an allsilicon platform. The progress of nano-scale fabrication has led to the ability to realize silicon emitters based on quantum confinement mechanisms. Quantum confinement in nano-structured silicon overcomes the indirect bandgap present in bulk silicon allowing for radiative emissions. Silicon/silicon dioxide superlattices employ two-dimensional confinement leading to light emission. Strong photoluminescence (PL) has been demonstrated in Si/SiO2 superlattices, confirming the presence of quantum confinement effects. Our super lattice structures are grown using plasma enhanced chemical vapor deposition (PECVD) with alternating layers of silicon and silicon dioxide. Sub-10 nanometer periods are confirmed via transmission electron microscopy (TEM) and x-ray reflectivity (XRR) studies. However, consistent and predictable PL and electroluminescence (EL) relies on precise measurement and characterization of the deposition process. Spectroscopic ellipsometry (SE) offers a non-destructive extremely sensitive method of optical characterization which provides us with the required control. We present characterization of our superlattice structures using spectroscopic ellipsometry. The ellipsometer allows us to measure optical properties of the individual layers of ultra-thin silicon as a part of Si/SiO2 superlattices. We demonstrate the change in the imaginary part of the dielectric function and the bandgap for a-Si. We also generate deposition rate curves for very specific PECVD recipes and apply this information to further SE characterization and modeling of multi-period superlattice structures.

Paper Details

Date Published: 6 February 2008
PDF: 8 pages
Proc. SPIE 6883, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics, 68830P (6 February 2008); doi: 10.1117/12.768709
Show Author Affiliations
Tim Creazzo, Univ. of Delaware (United States)
Lindsay Prather, Univ. of Delaware (United States)
Brandon Redding, Univ. of Delaware (United States)
Shouyuan Shi, Univ. of Delaware (United States)
Dennis Prather, Univ. of Delaware (United States)

Published in SPIE Proceedings Vol. 6883:
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics
Thomas J. Suleski; Winston V. Schoenfeld; Jian Jim Wang, Editor(s)

© SPIE. Terms of Use
Back to Top