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Proceedings Paper

Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases
Author(s): N. Buecking; S. Butscher; M. Richter; C. Weber; S. Declair; M. Woerner; K. Reimann; P. Kratzer; M. Scheffler; A. Knorr
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Paper Abstract

A theory of electron relaxation for electron gases in semiconductor quantum well structures and at semiconductor surfaces is presented. The electron relaxation is described by quantum-kinetic equations. In the nonlinear optical response of a two dimensional electron gas in a GaN quantum well, polaronic signatures are clearly enhanced compared to the linear response, if the pump pulse is tuned to the polaron energy. For the phonon-induced electron relaxation at Si (001) surface structures, the interplay of bulk and surface states yields a complex temporal relaxation dynamics depending on the slab thickness.

Paper Details

Date Published: 14 February 2008
PDF: 13 pages
Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 689209 (14 February 2008); doi: 10.1117/12.768659
Show Author Affiliations
N. Buecking, Technische Univ. Berlin (Germany)
S. Butscher, Technische Univ. Berlin (Germany)
M. Richter, Technische Univ. Berlin (Germany)
C. Weber, Lund Univ. (Sweden)
S. Declair, Technische Univ. Berlin (Germany)
M. Woerner, Max Born Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
K. Reimann, Max Born Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
P. Kratzer, Univ. Duisburg-Essen (Germany)
M. Scheffler, Fritz-Haber-Institut der Max-Planck-Gesellschaft (Germany)
A. Knorr, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 6892:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII
Jin-Joo Song; Kong-Thon Tsen; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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