Share Email Print
cover

Proceedings Paper

Progress in MOVPE-growth of InGaN and InN
Author(s): Takashi Matsuoka
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Nitride-semiconductor light-emitting-devices such as blue, green, and white LEDs, and 400nm-wavlength LDs have been commercially available since 1993. The active layers in all these devices consist of InGaN, which composition is designed for the wavelength of the emitted light. In this paper, the current status of MOVPE growth in GaN to InN, including InGaN is reviewed. The GaN growth mechanism of two-step growth on a sapphire substrate, polarity- controlled GaN growth, and the possibility in In-rich InGaN growth are described. The InN research as an ultimate material of InGaN is also introduced. The future perspective of InN in device application is also mentioned.

Paper Details

Date Published: 4 February 2008
PDF: 6 pages
Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69000S (4 February 2008); doi: 10.1117/12.768644
Show Author Affiliations
Takashi Matsuoka, Tohoku Univ., CREST (Japan)


Published in SPIE Proceedings Vol. 6900:
Quantum Sensing and Nanophotonic Devices V
Rengarajan Sudharsanan; Christopher Jelen, Editor(s)

© SPIE. Terms of Use
Back to Top