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Proceedings Paper

Semiconductor nanowires for solid state lighting: simulation, epitaxy, integration, optical and electrical characterization
Author(s): F. Levy; Y. Desieres; P. Ferret; S. Fichet; S. Gidon; P. Gilet; P. Noel; I.-C. Robin; E. Romain-Latu; M. Rosina; R. Songmuang; G. Feuillet; B. Daudin; A. Chelnokov
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Paper Abstract

LEDs based on semiconductor nanowires are a promising alternative to the standard planar devices to achieve low cost high yield manufacturing for the general lighting applications. The expected advantages of such structures are a high crystalline quality of the heterostructures, compliance with a large range of substrates and light extraction enhancement. We report here on the present status of our research work concerning the electromagnetic simulation of nanowire emission, the epitaxy of near-UV semiconductor vertically aligned nanowires, the collective integration technology of these nanowires and their characterizations.

Paper Details

Date Published: 2 October 2007
PDF: 9 pages
Proc. SPIE 6797, Manufacturing LEDs for Lighting and Displays, 67970P (2 October 2007); doi: 10.1117/12.768615
Show Author Affiliations
F. Levy, CEA-LETI, MINATEC (France)
Y. Desieres, CEA-LETI, MINATEC (France)
P. Ferret, CEA-LETI, MINATEC (France)
S. Fichet, CEA-LETI, MINATEC (France)
S. Gidon, CEA-LETI, MINATEC (France)
P. Gilet, CEA-LETI, MINATEC (France)
P. Noel, CEA-LETI, MINATEC (France)
I.-C. Robin, CEA-LETI, MINATEC (France)
E. Romain-Latu, CEA-LETI, MINATEC (France)
M. Rosina, CEA-LETI, MINATEC (France)
R. Songmuang, CEA-LETI, MINATEC (France)
G. Feuillet, CEA-LETI, MINATEC (France)
B. Daudin, CEA-Grenoble, DRFMC (France)
A. Chelnokov, CEA-LETI, MINATEC (France)

Published in SPIE Proceedings Vol. 6797:
Manufacturing LEDs for Lighting and Displays

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