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Proceedings Paper

Single photon avalanche photodiodes for near-infrared photon counting
Author(s): Mark A. Itzler; Xudong Jiang; Rafael Ben-Michael; Bruce Nyman; Krystyna Slomkowski
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Paper Abstract

InP-based single photon avalanche diodes (SPADs) have proven to be the most practical solution currently available for many applications requiring high-performance photon counting at near-infrared wavelengths between 1.0 and 1.6 µm. We describe recent progress in the design, characterization, and modeling of InP-based SPADs, particularly with respect to the dark count rate vs. photon detection efficiency metric of devices optimized for use at both 1.55 μm and 1.06 μm. In this context, we report for the first time dark count probabilities as low as 7 x 10-7 ns-1 for fiber-coupled 1.55 μm SPADs operated at 20% detection efficiency and 215 K. Additionally, because of the critical role played by afterpulsing in limiting photon counting rates, we describe recent characterization of the dependence of afterpulsing effects on SPAD operating conditions such as photon detection efficiency, repetition rate, and bias gate length.

Paper Details

Date Published: 1 February 2008
PDF: 12 pages
Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69001E (1 February 2008); doi: 10.1117/12.768564
Show Author Affiliations
Mark A. Itzler, Princeton Lightwave, Inc. (United States)
Xudong Jiang, Princeton Lightwave, Inc. (United States)
Rafael Ben-Michael, Princeton Lightwave, Inc. (United States)
Bruce Nyman, Princeton Lightwave, Inc. (United States)
Krystyna Slomkowski, Princeton Lightwave, Inc. (United States)


Published in SPIE Proceedings Vol. 6900:
Quantum Sensing and Nanophotonic Devices V
Rengarajan Sudharsanan; Christopher Jelen, Editor(s)

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