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Proceedings Paper

Photonic analog-to-digital conversion with electronic-photonic integrated circuits
Author(s): F. X. Kärtner; R. Amatya; M. Araghchini; J. Birge; H. Byun; J. Chen; M. Dahlem; N. A. DiLello; F. Gan; C. W. Holzwarth; J. L. Hoyt; E. P. Ippen; A. Khilo; J. Kim; M. Kim; A. Motamedi; J. S. Orcutt; M. Park; M. Perrott; M. A. Popović; R. J. Ram; H. I. Smith; G. R. Zhou; S. J. Spector; T. M. Lyszczarz; M. W. Geis; D. M. Lennon; J. U. Yoon; M. E. Grein; R. T. Schulein
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Paper Abstract

Photonic Analog-to-Digital Conversion (ADC) has a long history. The premise is that the superior noise performance of femtosecond lasers working at optical frequencies enables us to overcome the bottleneck set by jitter and bandwidth of electronic systems and components. We discuss and demonstrate strategies and devices that enable the implementation of photonic ADC systems with emerging electronic-photonic integrated circuits based on silicon photonics. Devices include 2-GHz repetition rate low noise femtosecond fiber lasers, Si-Modulators with up to 20 GHz modulation speed, 20 channel SiN-filter banks, and Ge-photodetectors. Results towards a 40GSa/sec sampling system with 8bits resolution are presented.

Paper Details

Date Published: 13 February 2008
PDF: 15 pages
Proc. SPIE 6898, Silicon Photonics III, 689806 (13 February 2008); doi: 10.1117/12.767926
Show Author Affiliations
F. X. Kärtner, Massachusetts Institute of Technology (United States)
R. Amatya, Massachusetts Institute of Technology (United States)
M. Araghchini, Massachusetts Institute of Technology (United States)
J. Birge, Massachusetts Institute of Technology (United States)
H. Byun, Massachusetts Institute of Technology (United States)
J. Chen, Massachusetts Institute of Technology (United States)
M. Dahlem, Massachusetts Institute of Technology (United States)
N. A. DiLello, Massachusetts Institute of Technology (United States)
F. Gan, Massachusetts Institute of Technology (United States)
C. W. Holzwarth, Massachusetts Institute of Technology (United States)
J. L. Hoyt, Massachusetts Institute of Technology (United States)
E. P. Ippen, Massachusetts Institute of Technology (United States)
A. Khilo, Massachusetts Institute of Technology (United States)
J. Kim, Massachusetts Institute of Technology (United States)
M. Kim, Massachusetts Institute of Technology (United States)
A. Motamedi, Massachusetts Institute of Technology (United States)
J. S. Orcutt, Massachusetts Institute of Technology (United States)
M. Park, Massachusetts Institute of Technology (United States)
M. Perrott, Massachusetts Institute of Technology (United States)
M. A. Popović, Massachusetts Institute of Technology (United States)
R. J. Ram, Massachusetts Institute of Technology (United States)
H. I. Smith, Massachusetts Institute of Technology (United States)
G. R. Zhou, Massachusetts Institute of Technology (United States)
S. J. Spector, Massachusetts Institute of Technology, Lincoln Lab. (United States)
T. M. Lyszczarz, Massachusetts Institute of Technology, Lincoln Lab. (United States)
M. W. Geis, Massachusetts Institute of Technology, Lincoln Lab. (United States)
D. M. Lennon, Massachusetts Institute of Technology, Lincoln Lab. (United States)
J. U. Yoon, Massachusetts Institute of Technology, Lincoln Lab. (United States)
M. E. Grein, Massachusetts Institute of Technology, Lincoln Lab. (United States)
R. T. Schulein, Massachusetts Institute of Technology, Lincoln Lab. (United States)


Published in SPIE Proceedings Vol. 6898:
Silicon Photonics III
Joel A. Kubby; Graham T. Reed, Editor(s)

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