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Proceedings Paper

Structural defects and degradation of high-power pure-blue GaN-based laser diodes
Author(s): Shigetaka Tomiya; Osamu Goto; Masao Ikeda
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Paper Abstract

In order to elongate lifetime of high power pure-blue GaN based laser diodes, reduction of newly created structural defects at active region, which consists of multiple quantum well structures, is inevitable. We, first, report on detailed structural analysis of this new type defects and discuss formation mechanism and reduction methodology of these defects. We, then, fabricated laser diodes with current injection-free structure at front facets, which is confirmed to be effective for suppression of degradation by catastrophic optical damage. We also discuss degradation mechanism of the laser diodes.

Paper Details

Date Published: 15 February 2008
PDF: 6 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68940N (15 February 2008); doi: 10.1117/12.767769
Show Author Affiliations
Shigetaka Tomiya, Sony Corp. (Japan)
Osamu Goto, Sony Corp. (Japan)
Masao Ikeda, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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