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Proceedings Paper

Giant nonlinear gain coefficient of an InAs/AlGaInAs quantum dot laser
Author(s): L. F. Lester; N. B Terry; A. J. Moscho; M. L. Fanto; N. A. Naderi; Y. Li; V. Kovanis
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Paper Abstract

The linewidth enhancement factor (LEF) and nonlinear gain coefficient of an InAs/AlGaInAs quantum dot (QD) laser are measured using an injection locking technique. The nonlinear gain coefficient was found by curve-fitting the measured LEF as a linear function of the output power. The LEF of the InAs/AlGaInAs quantum dot laser was measured to be 1.2 to 8.6 at output powers from 2 to 10.2 mW, leading to a corresponding nonlinear gain coefficient of 1.4 x 10-14 cm3. This value for the nonlinear gain coefficient is three orders of magnitude higher than the typical quantum well nonlinear gain coefficient of 10-17 cm3. Consequently we expect that the dynamics under optical injection and external feedback of this type of quantum dot laser will be dramatically different than in quantum well lasers, suggesting that a careful re-examination of the dynamics of this type of laser is needed.

Paper Details

Date Published: 29 February 2008
PDF: 8 pages
Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 68890M (29 February 2008); doi: 10.1117/12.767766
Show Author Affiliations
L. F. Lester, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
N. B Terry, Air Force Research Lab. (United States)
A. J. Moscho, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
M. L. Fanto, Air Force Research Lab. (United States)
N. A. Naderi, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
Y. Li, Ctr. for High Technology Materials, Univ. of New Mexico (United States)
V. Kovanis, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 6889:
Physics and Simulation of Optoelectronic Devices XVI
Marek Osinski; Fritz Henneberger; Keiichi Edamatsu, Editor(s)

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