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Proceedings Paper

Kinetic Monte Carlo simulation of the temperature dependence of semiconductor quantum dot growth
Author(s): Chang Zhao; Man Zhao
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Paper Abstract

A detailed kinetic Monte Carlo simulation (KMC) is developed to investigate the temperature dependence of semiconductor quantum dot (QD) grown by molecular beam epitaxy syetem. We find that growth temperature plays an important role in determining the size of the QD. The simulation results are compared with the experiment and the agreement between them indicates that this KMC simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs.

Paper Details

Date Published: 7 January 2008
PDF: 4 pages
Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68240B (7 January 2008); doi: 10.1117/12.767738
Show Author Affiliations
Chang Zhao, Beijing Institute of Petrochemical and Technology (China)
Man Zhao, Beijing Institute of Petrochemical and Technology (China)


Published in SPIE Proceedings Vol. 6824:
Semiconductor Lasers and Applications III
Lianghui Chen; Hiroyuki Suzuki; Paul T. Rudy; Ninghua Zhu, Editor(s)

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