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Proceedings Paper

Millimeter-wave GaN HFET technology
Author(s): Masataka Higashiwaki; Takashi Mimura; Toshiaki Matsui
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Paper Abstract

This paper describes device process and characteristics of sub-100-nm-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) for millimeter-wave applications. We developed three techniques to suppress short-channel effects and thereby enhance high-frequency device characteristics: high-AL-composition and thing AlGaN barrier layers, SiN passivation by catalytic chemical vapor deposition, and sub-100-nm Ti-based gates. The Al0.4Ga0.6N(6 nm)/GaN HFETs with a gate length of 60 nm on a 4H-SiC substrate showed a maximum drain current density of 1.6 A/mm and a maximum transconductance of 424 mS/mm. THe use of the techniques led to record current-gain cutoff frequency (fT) and maximum oscillation frequency (fmax) of 190 and 241 GH, respectively. The fT and fmaxkept high values over the wide range of drain voltage and current. These results indicate significantly high potential of GaN HFETs for high-power applications in the millimeter-wave frequency range.

Paper Details

Date Published: 15 February 2008
PDF: 9 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941L (15 February 2008); doi: 10.1117/12.767574
Show Author Affiliations
Masataka Higashiwaki, National Institute of Information and Communications Technology (Japan)
Takashi Mimura, National Institute of Information and Communications Technology (Japan)
Fujitsu Labs. Ltd. (Japan)
Toshiaki Matsui, National Institute of Information and Communications Technology (Japan)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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