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Paper Abstract
Integration of active photonic components on silicon and silicon on insulator (SOI) would be versatile for nanophotonics
since CMOS compatible processes are available for fabricating passive devices on Si/SOI. Selective area growth of III-V
semiconductors is also attractive for realising periodic structures for nanophotonics. Here we report on the recent results
of high quality InP on Si and InP on SOI achieved by means of nanopatterning. MQW structures have been realised on
InP/Si and InP/SOI. We would elaborate routes for monolithic integration of active and passive devices for
nanophotonics.
Paper Details
Date Published: 1 February 2008
PDF: 7 pages
Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69000H (1 February 2008); doi: 10.1117/12.767339
Published in SPIE Proceedings Vol. 6900:
Quantum Sensing and Nanophotonic Devices V
Rengarajan Sudharsanan; Christopher Jelen, Editor(s)
PDF: 7 pages
Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69000H (1 February 2008); doi: 10.1117/12.767339
Show Author Affiliations
Yanting Sun, Svedice AB (Sweden)
Published in SPIE Proceedings Vol. 6900:
Quantum Sensing and Nanophotonic Devices V
Rengarajan Sudharsanan; Christopher Jelen, Editor(s)
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