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Proceedings Paper

High-power InGaN LEDs: present status and future prospects
Author(s): B. Hahn; A. Weimar; M. Peter; J. Baur
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Paper Abstract

The ThinGaN® technology of OSRAM Opto semiconductors enables high power LEDs with wall plug efficiencies of currently up to 50%, enabling efficacies of > 100lm/W for white and green LEDs. The good scalability of the technology enables devices which deliver high luminous flux. The future limitations regarding efficacy of white LED can be estimated to be 150lm/W for high color rendering. Besides efficiency long term stability and high temperature capability are requirements for market adoption

Paper Details

Date Published: 12 February 2008
PDF: 8 pages
Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 691004 (12 February 2008); doi: 10.1117/12.767255
Show Author Affiliations
B. Hahn, OSRAM Opto Semiconductors (Germany)
A. Weimar, OSRAM Opto Semiconductors (Germany)
M. Peter, OSRAM Opto Semiconductors (Germany)
J. Baur, OSRAM Opto Semiconductors (Germany)


Published in SPIE Proceedings Vol. 6910:
Light-Emitting Diodes: Research, Manufacturing, and Applications XII
Klaus P. Streubel; Heonsu Jeon, Editor(s)

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