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Proceedings Paper

High performance 1.3 µm GaInNAs quantum well lasers on GaAs
Author(s): S. M. Wang; G. Adolfsson; H. Zhao; Y. Q. Wei; J. S. Gustavsson; M. Sadeghi; A. Larsson
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Paper Abstract

We present state-of-the-art performance of 1.3 μm GaInNAs lasers on GaAs grown by molecular beam epitaxy. The lowest achieved threshold current density is 297, 150 and 133 A/cm2 per quantum well (QW) for single, double and triple QW broad area lasers with a cavity length of 1 mm. The characteristic temperature is 93-133 K in the ambient temperature range of 10-80 °C for broad area lasers depending on the cavity length, and increases to 163-208 K for ridge waveguide lasers as a result of temperature insensitive lateral carrier diffusion in QWs. The maximum 3 dB bandwidth of 17 GHz is achieved in a double QW laser. Uncooled 10 Gb/s operation up to 110 °C has been demonstrated.

Paper Details

Date Published: 29 January 2008
PDF: 12 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 690905 (29 January 2008); doi: 10.1117/12.766357
Show Author Affiliations
S. M. Wang, Chalmers Univ. of Technology (Sweden)
G. Adolfsson, Chalmers Univ. of Technology (Sweden)
H. Zhao, Chalmers Univ. of Technology (Sweden)
Y. Q. Wei, Univ. of Cambridge (United Kingdom)
J. S. Gustavsson, Chalmers Univ. of Technology (Sweden)
M. Sadeghi, Chalmers Univ. of Technology (Sweden)
A. Larsson, Chalmers Univ. of Technology (Sweden)


Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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