Share Email Print
cover

Proceedings Paper

A 800(H) x 600(V) high sensitivity and high full well capacity CMOS image sensor with active pixel readout feedback operation
Author(s): Woonghee Lee; Nana Akahane; Satoru Adachi; Koichi Mizobuchi; Shigetoshi Sugawa
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A high sensitivity and high full well capacity CMOS image sensor using active pixel readout feedback operation with positions of pixel select switch, operation timings and initial bias conditions has been reported. 1/3-inch 5.6-μm pixel pitch 800(H) x 600(V) color CMOS image sensors with the switch X set on or under the pixel SF have been fabricated by a 0.18-μm 2-Poly 3-Metal CMOS technology. The comparison of the active pixel readout feedback operation between two CMOS image sensors, which only have the deference of the switch X's position, has performed. As to the result, the switch X set on the pixel SF is favor for the active pixel readout feedback operation to improve the readout gain and the S/N ratio. This CMOS image sensor achieves high readout gain, high conversion gain, low input-referred noise and high full well capacity by the active pixel readout feedback operation.

Paper Details

Date Published: 29 February 2008
PDF: 8 pages
Proc. SPIE 6816, Sensors, Cameras, and Systems for Industrial/Scientific Applications IX, 68160R (29 February 2008); doi: 10.1117/12.766027
Show Author Affiliations
Woonghee Lee, Tohoku Univ. (Japan)
Nana Akahane, Tohoku Univ. (Japan)
Satoru Adachi, Tohoku Univ. (Japan)
Texas Instruments Japan (Japan)
Koichi Mizobuchi, Tohoku Univ. (Japan)
Texas Instruments Japan (Japan)
Shigetoshi Sugawa, Tohoku Univ. (Japan)


Published in SPIE Proceedings Vol. 6816:
Sensors, Cameras, and Systems for Industrial/Scientific Applications IX
Morley M. Blouke; Erik Bodegom, Editor(s)

© SPIE. Terms of Use
Back to Top