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Proceedings Paper

On-chip integration of InGaAs/GaAs quantum dot lasers with waveguides and modulators on silicon
Author(s): Jun Yang; Pallab Bhattacharya; Guoxuan Qin; Zhenqiang Ma
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Paper Abstract

Compound-semiconductor-based photonic devices, including lasers and modulators, directly grown and on-chip integrated on Si substrates provide a promising approach for the realization of optical interconnects with CMOS compatibility. Utilizing quantum dots as efficient dislocation filters near the GaAs-Si interface, for the first time, we demonstrated high-performance InGaAs/GaAs quantum dot (QD) lasers on silicon with a relatively low threshold current (Jth = 900 A/cm2), large small-signal modulation bandwidth of 5.5 GHz, and a high characteristic temperature (T0 = 278 K). The integrated InGaAs QD lasers with quantum well (QW) electroabsorption modulators, achieved through molecular beam epitaxy (MBE) growth and regrowth, exhibit a coupling coefficient greater than 20% and a modulation depth ~100% at 5 V reverse bias. We achieved the monolithic integration of amorphous and crystalline silicon waveguides with quantum dot lasers by using plasma-enhanced-chemical-vapor-deposition (PECVD) and membrane transfer, respectively. Finally, preliminary results on the integration of QD lasers with Si CMOS transistors are presented.

Paper Details

Date Published: 5 February 2008
PDF: 8 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090N (5 February 2008); doi: 10.1117/12.765889
Show Author Affiliations
Jun Yang, Univ. of Michigan (United States)
Pallab Bhattacharya, Univ. of Michigan (United States)
Guoxuan Qin, Univ. of Wisconsin, Madison (United States)
Zhenqiang Ma, Univ. of Wisconsin, Madison (United States)

Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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