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Proceedings Paper

Ge photodetectors integrated in Si waveguides
Author(s): Laurent Vivien; Mathieu Rouvière; Jean-Marc Fédéli; Delphine Marris-Morini; Jean-François Damlencourt; Loubna El Melhaoui; Eric Cassan; Xavier Le Roux; Paul Crozat; Juliette Mangeney; Suzanne Laval
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Paper Abstract

This paper reports theoretical and experimental investigations of germanium photodetectors integrated in silicon on insulator waveguides for metal-semiconductor-metal (MSM) photodetectors integrated in a slightly etched rib waveguide. Experimental characteristics of germanium on silicon photodetectors have been obtained using time measurements with femtosecond pulses and opto-RF experiments. For MSM structure with 1μm electrode spacing, the measured bandwidth under 6V bias is 25 GHz at 1.55 μm wavelength with a responsivity as high as 1 A/W and the bandwidth reaches 30GHz for 0.7μm electrode spacing under 1V bias.

Paper Details

Date Published: 26 February 2008
PDF: 9 pages
Proc. SPIE 6898, Silicon Photonics III, 689815 (26 February 2008); doi: 10.1117/12.765701
Show Author Affiliations
Laurent Vivien, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud XI (France)
Mathieu Rouvière, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud XI (France)
Jean-Marc Fédéli, CEA-LETI (France)
Delphine Marris-Morini, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud XI (France)
Jean-François Damlencourt, CEA-LETI (France)
Loubna El Melhaoui, CEA-LETI (France)
Eric Cassan, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud XI (France)
Xavier Le Roux, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud XI (France)
Paul Crozat, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud XI (France)
Juliette Mangeney, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud XI (France)
Suzanne Laval, Institut d'Electronique Fondamentale, CNRS, Univ. Paris-Sud XI (France)


Published in SPIE Proceedings Vol. 6898:
Silicon Photonics III
Joel A. Kubby; Graham T. Reed, Editor(s)

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