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Proceedings Paper

AZO films with Al nano-particles to improve the light extraction efficiency of GaN-based light-emitting diodes
Author(s): Ying-Hung Chou; Jheng-Tai Yan; Hsin-Ying Lee; Ching-Ting Lee
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Paper Abstract

The co-sputtering Al-doped ZnO (AZO) films with Al nano-particles were used to increase the extraction efficiency of GaN-based light-emitting diodes (LEDs). Fixing the ZnO radio frequency (RF) power of 100W and changing the Al DC power from 0 to 13W, the AZO films with various Al contents can be obtained. In the experimental results, the AZO films deposited with Al DC power of 0, 4.5 and 7W do not have Al segregation. However, the segregated Al nano-particles can be found in the AZO films deposited by Al DC power of 10W and 13W. The co-sputtering 170 nm-thick AZO films with and without Al nano-particles were deposited on the transparent area of LEDs and compared the light output intensity of conventional LEDs. The light intensity of LEDs with AZO films with Al DC power 0, 4.5 and 7W increased 10% than that of conventional LEDs. This was due to the AZO film played a role of anti-reflection coating (ARC) layer. The light intensity of LEDs with AZO film deposited using Al DC power of 10W and 13W increased about 35% and 30%, respectively. It can be deduced that the output light is scattered by the Al nano-particles existed in the AZO film.

Paper Details

Date Published: 15 February 2008
PDF: 6 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941C (15 February 2008); doi: 10.1117/12.765633
Show Author Affiliations
Ying-Hung Chou, National Cheng Kung Univ. (Taiwan)
Jheng-Tai Yan, National Cheng Kung Univ. (Taiwan)
Hsin-Ying Lee, National Cheng Kung Univ. (Taiwan)
Ching-Ting Lee, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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