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Proceedings Paper

Femtosecond laser damage threshold and nonlinear characterization in bulk transparent SiC materials
Author(s): G. Logan DesAutels; Chris Brewer; Mark Walker; Shane Juhl; Marc Finet; Scott Ristich; Matt Whitaker; Peter Powers
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Paper Abstract

Semi-insulating and conducting SiC crystalline transparent substrates were studied after being processed by femtosecond laser radiation (780nm at 160fs). Z-scan and damage threshold experiments were performed on both SiC bulk materials to determine each samples' nonlinear and threshold parameters. "Damage" in this text refers to an index of refraction modification as observed visually under an optical microscope. In addition, a study was performed to understand the damage threshold as a function of numerical aperture. Presented here for the first time, to the best of our knowledge, is the damage threshold, nonlinear index of refraction, and nonlinear absorption measured values.

Paper Details

Date Published: 13 February 2008
PDF: 14 pages
Proc. SPIE 6875, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VII, 68751M (13 February 2008); doi: 10.1117/12.765560
Show Author Affiliations
G. Logan DesAutels, AT&T Government Solutions (United States)
Chris Brewer, Air Force Research Lab. (United States)
Mark Walker, General Dynamics Information Technology (United States)
Shane Juhl, Air Force Research Lab. (United States)
Marc Finet, AT&T Government Solutions (United States)
Scott Ristich, AT&T Government Solutions (United States)
Matt Whitaker, AT&T Government Solutions (United States)
Peter Powers, Univ. of Dayton (United States)


Published in SPIE Proceedings Vol. 6875:
Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VII
Peter E. Powers, Editor(s)

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