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Proceedings Paper

Research and fabrication of high power LEDs with transparent electrodes
Author(s): Xiaoyan Yi; Libin Wang; Jingmei Fan; Xiaodong Wang; Hua Yang; Yan Li; Liangchen Wang; Guohong Wang; Fuhua Yang
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Paper Abstract

In this paper we studied the influence of N electrode on the extraction efficiency of high power light-emitting diodes (LEDs). Simulation and experimental results show that comparing with traditional metal N electrodes the extraction efficiency of LEDs with transparent N electrode is increased by 15%, and it is easier in process than the other techniques. So we proposed a new kind of strip LEDs with transparent electrodes on both P-GaN and N-GaN. The design of transparent electrodes was trade-off between transmittance and resistance. At the same time, the strip structure has some advantages over the traditional square LEDs, which can increase the extraction efficiency and reduce the thermal resistance. Antireflective and high reflective optical coatings were also used in this design. The fabrication of LEDs with transparent electrodes on both P-GaN and N-GaN has been demonstrated. The output power of blue LEDs is 240mW at 350mA, forward voltage is below 3.5V. The luminous flux of white LEDs reached 65lm at 350mA.

Paper Details

Date Published: 4 January 2008
PDF: 5 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410B (4 January 2008); doi: 10.1117/12.765244
Show Author Affiliations
Xiaoyan Yi, Institute of Semiconductors (China)
Libin Wang, Institute of Semiconductors (China)
Jingmei Fan, Institute of Semiconductors (China)
Xiaodong Wang, Institute of Semiconductors (China)
Hua Yang, Institute of Semiconductors (China)
Yan Li, Institute of Semiconductors (China)
Liangchen Wang, Institute of Semiconductors (China)
Guohong Wang, Institute of Semiconductors (China)
Fuhua Yang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Yuwen Zhao; Nuofu Chen; Ling Wu; Yubo Fan; Vladimir M. Andreev; Yong-Hang Zhang; Jai Singh; Michael E. Coltrin, Editor(s)

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