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Proceedings Paper

Near-field fluorescence lifetime imaging of semiconductor interfaces used in laser cooling
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Paper Abstract

Simultaneous near-field fluorescence lifetime imaging and atomic force microscopy identify radiative, interface and subsurface defect recombination sites in GaAs/GaInP heterostructures. This instrumentation helps characterize samples for laser cooling.

Paper Details

Date Published: 11 February 2008
PDF: 7 pages
Proc. SPIE 6907, Laser Refrigeration of Solids, 690704 (11 February 2008); doi: 10.1117/12.765236
Show Author Affiliations
Daniel A. Bender, The Univ. of New Mexico (United States)
Mansoor Sheik-Bahae, The Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 6907:
Laser Refrigeration of Solids
Richard I. Epstein; Mansoor Sheik-Bahae, Editor(s)

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