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Proceedings Paper

Engineering of hole-spin polarization in nanowires
Author(s): Ulrich Zülicke; Dan Csontos
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Paper Abstract

We present a theoretical study of Zeeman spin splitting for quasi-onedimensional valence-band edges in cylindrical nanowires subject to a magnetic field parallel to the wire direction. The interplay between quantum confinement and strong spin-orbit coupling in the valence band gives rise to a controllable large variation of the effective g-factor for single wire levels. A direct correspondence is established between values for hole g-factors and characteristic spin-polarization profiles for wire-level bound states. The correlation between hole spin splittings and polarizations is mapped over the range of spin-orbit coupling strengths present in typical semiconductor materials. We propose to use nanowire subband edges as a versatile laboratory for experimental and theoretical study of the complex spin properties exhibited by quantum-confined holes.

Paper Details

Date Published: 9 January 2008
PDF: 10 pages
Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 68000A (9 January 2008); doi: 10.1117/12.765230
Show Author Affiliations
Ulrich Zülicke, Massey Univ. (New Zealand)
Univ. Karlsruhe (Germany)
Dan Csontos, Massey Univ. (New Zealand)


Published in SPIE Proceedings Vol. 6800:
Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
Hark Hoe Tan; Jung-Chih Chiao; Lorenzo Faraone; Chennupati Jagadish; Jim Williams; Alan R. Wilson, Editor(s)

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