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Proceedings Paper

Reliability modeling of high voltage AlGaN/GaN and GaAs field-effect transistors
Author(s): R. J. Trew; Y. Liu; W. Kuang; G. L. Bilbro
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Paper Abstract

High voltage HFET's fabricated from nitride semiconductors utilizing the AlGaN/GaN heterojunction or GaAs using field plates demonstrate excellent RF output power performance. The nitride HFET's produce RF output power greater than an order of magnitude higher than available from GaAs and InP based devices, and GaAs FET's fabricated with field-plates can produce RF output power about a factor of two greater than standard FET's. However, the FET's demonstrate a reliability problem where the dc current and RF output power continually decrease as a function of time. The problem is more serious in the nitride HFET's, although both nitride-based and GaAs-based devices suffer reliability problems. The reliability problem is related to the conduction characteristics of the gate electrode and an electron tunneling mechanism where electrons leak from the gate to the surface of the semiconductor. In this work the physics responsible for this behavior are investigated and described. Physics-based models suitable for use in RF circuit harmonic-balance simulators have been developed, with excellent agreement between measured and simulated data. Design techniques to reduce the reliability problem will be discussed.

Paper Details

Date Published: 6 February 2008
PDF: 7 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941H (6 February 2008); doi: 10.1117/12.764958
Show Author Affiliations
R. J. Trew, North Carolina State Univ. (United States)
Y. Liu, North Carolina State Univ. (United States)
W. Kuang, North Carolina State Univ. (United States)
G. L. Bilbro, North Carolina State Univ. (United States)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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