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Proceedings Paper

Submicron-thick microcavity InGaN light emitting diodes
Author(s): Yong-Seok Choi; Michael Iza; Elison Matioli; Gregor Koblmüller; James S. Speck; Claude Weisbuch; Evelyn L. Hu
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Paper Abstract

We report on submicron-thick microcavity light emitting diodes (MCLEDs) emitting at the wavelengths of 415 nm ~ 460 nm. These devices were fabricated by flip-chip-bonding, laser lift-off, and thinning processes. Growth of a highquality AlxGa1-xN interlayer and etch selectivity between N-face GaN and AlxGa1-xN allowed high-precision control of microcavity thickness, resulting in controlled microcavity effects. Single Fabry-Pérot modes confined in 2λ ~ 2.5λ-thick MCLEDs gave rise to characteristic angular emission, in contrast to a Lambertian emission. High current operation (~100 mA) showed robustness of these thin devices with promising the possibility of high-brightness application. We will discuss design and processing issues regarding photonic-crystal integration towards higher improvements in light extraction efficiency.

Paper Details

Date Published: 13 February 2008
PDF: 8 pages
Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 69100R (13 February 2008); doi: 10.1117/12.764696
Show Author Affiliations
Yong-Seok Choi, Univ. of California, Santa Barbara (United States)
Michael Iza, Univ. of California, Santa Barbara (United States)
Elison Matioli, Univ. of California, Santa Barbara (United States)
Gregor Koblmüller, Univ. of California, Santa Barbara (United States)
James S. Speck, Univ. of California, Santa Barbara (United States)
Claude Weisbuch, Univ. of California, Santa Barbara (United States)
Evelyn L. Hu, Univ. of California, Santa Barbara (United States)


Published in SPIE Proceedings Vol. 6910:
Light-Emitting Diodes: Research, Manufacturing, and Applications XII
Klaus P. Streubel; Heonsu Jeon, Editor(s)

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