Share Email Print
cover

Proceedings Paper

Single-photon avalanche photodiode with improved structure using an innovative current bias scheme
Author(s): Yonglin Gu; Fow-Sen Choa; Yan Feng; Xiucheng Wu; Stewart Wu; Bing Guan; Peter Su; Michael A. Krainak
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Single-photon avalanche photodiodes (SPADs) based on an improved structure were fabricated. Measurement results show that SPADs with a sharp rising I-V and gain curves were obtained by controlling SPAD's multiplication region thickness. The tunneling leakage current was reduced. Device's dark count rates (DCR) and single photon detection efficiency (SPDE) were measured using our innovative gated current bias scheme under different operating conditions to obtain a maximum SPDE. The experimental data demonstrated that SPADs' performance can be improved by decreasing the difference between the breakdown voltage and the punch through voltage.

Paper Details

Date Published: 5 February 2008
PDF: 9 pages
Proc. SPIE 6890, Optical Components and Materials V, 68900N (5 February 2008); doi: 10.1117/12.764540
Show Author Affiliations
Yonglin Gu, Univ. of Maryland Baltimore County (United States)
Fow-Sen Choa, Univ. of Maryland Baltimore County (United States)
Yan Feng, Univ. of Maryland Baltimore County (United States)
Xiucheng Wu, AdTech Optics, Inc. (United States)
Stewart Wu, NASA Goddard Space Flight Ctr. (United States)
Bing Guan, NASA Goddard Space Flight Ctr. (United States)
Peter Su, NASA Goddard Space Flight Ctr. (United States)
Michael A. Krainak, NASA Goddard Space Flight Ctr. (United States)


Published in SPIE Proceedings Vol. 6890:
Optical Components and Materials V
Michel J. F. Digonnet; Shibin Jiang; John W. Glesener; J. Christopher Dries, Editor(s)

© SPIE. Terms of Use
Back to Top