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Proceedings Paper

Reduction of RIE induced damage of GaInAsP/InP DQW lasers fabricated by 2-step growth
Author(s): D. Plumwongrot; M. Kurokawa; T. Okumura; Y. Nishimoto; T. Maruyama; N. Nishiyama; S. Arai
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Paper Abstract

In order to realize low damage fine structuring processes for the low-dimensional quantum structures, we investigated a process for reducing the degradations of optical properties, which was induced during a reactive-ion-etching (RIE) process with CH4/H2 gas mixture in the quantum-well (QW) structures. Quantitative studies of optical degradation were carried out by photoluminescence (PL) and electroluminescence (EL) measurements. We introduced a thicker upper optical confinement layer (OCL) to protect the QWs from the RIE-plasma. In practical, for the PL measurement, twotypes of strain-compensated single-quantum-well (SC-SQW) structures were prepared for 40-nm-thick- and 80-nmthick- upper OCL wafers and covered by 20-nm-thick SiO2. After the samples were exposed to CH4/H2-RIE for 5- minutes, a relatively stronger suppression of integral PL intensity as well as a spectral broadening was observed in the sample with 40-nm-thick OCL, while those did not change in the sample with 80-nm-thick OCL. For the EL measurements, using two types of SC-DQW structures, samples were exposed to CH4/H2-RIE plasma for 5-minute and then re-grown for other layers to form high-mesa stripe laser structures (Ws=1.5μm). As a result, the spontaneous emission efficiency of the lasers with 80-nm-thick OCL was almost 2 times higher than that of the lasers with 40-nmthick OCL. In addition, a lower threshold current as well as a higher differential quantum efficiency was obtained for the lasers with 80-nm-thick OCL , while that in lasers with 40-nm-thick OCL indicated poor efficiency and a slightly higher threshold.

Paper Details

Date Published: 29 January 2008
PDF: 8 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090C (29 January 2008); doi: 10.1117/12.764538
Show Author Affiliations
D. Plumwongrot, Tokyo Institute of Technology (Japan)
M. Kurokawa, Tokyo Institute of Technology (Japan)
T. Okumura, Tokyo Institute of Technology (Japan)
Y. Nishimoto, Tokyo Institute of Technology (Japan)
T. Maruyama, Tokyo Institute of Technology (Japan)
JST-CREST (Japan)
N. Nishiyama, Tokyo Institute of Technology (Japan)
S. Arai, Tokyo Institute of Technology (Japan)
JST-CREST (Japan)


Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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