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Proceedings Paper

Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography
Author(s): Guan-Ting Chen; Chia-Hua Chan; Chia-Hung Hou; Hsueh-Hsing Liu; Nai-Wei Shiu; Mao-Nan Chang; Chii-Chang Chen; Jen-Inn Chyi
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Paper Abstract

The authors report on the growth of GaN on AlGaN/(111)Si micropillar array by metal-organic chemical vapor deposition. Using the substrates with micropillar array, 2 μm-thick GaN films without cracks can be achieved. Transmission electron microscopy, atomic force microscopy, and micro-Raman studies indicate that the dislocation density and residual stress of the GaN grown on micropillar array are also reduced. The results reveal the potential of this type of substrates for growing GaN-based devices as well as preparing GaN freestanding substrates.

Paper Details

Date Published: 15 February 2008
PDF: 6 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 689408 (15 February 2008); doi: 10.1117/12.764475
Show Author Affiliations
Guan-Ting Chen, National Central Univ. (Taiwan)
Chia-Hua Chan, National Central Univ. (Taiwan)
Chia-Hung Hou, National Central Univ. (Taiwan)
Hsueh-Hsing Liu, National Central Univ. (Taiwan)
Nai-Wei Shiu, National Central Univ. (Taiwan)
Mao-Nan Chang, National Nano Device Labs. (Taiwan)
Chii-Chang Chen, National Central Univ. (Taiwan)
Jen-Inn Chyi, National Central Univ. (Taiwan)

Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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