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Proceedings Paper

Efficient silicon-photonic modulator with recessed electrodes
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Paper Abstract

A Si ridge waveguide integrated with a lateral p-i-n diode forms a basic optical amplitude and phase modulator. An efficient Si modulator is expected to establish a carrier concentration in the waveguide with a minimum amount of electrical drive power. We show that P+ and N+ doping sections that are recessed below the slab lead to lower power consumption. This configuration is compared with alternative doping section arrangements. The optimum arrangement results in less Si active area and reduced carrier recombination.

Paper Details

Date Published: 13 February 2008
PDF: 8 pages
Proc. SPIE 6898, Silicon Photonics III, 68980A (13 February 2008); doi: 10.1117/12.764419
Show Author Affiliations
D. W. Zheng, Kotura, Inc. (United States)
B. T. Smith, Kotura, Inc. (United States)
M. Asghari, Kotura, Inc. (United States)

Published in SPIE Proceedings Vol. 6898:
Silicon Photonics III
Joel A. Kubby; Graham T. Reed, Editor(s)

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