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Proceedings Paper

GaN substrates by HVPE
Author(s): Markus Weyers; Eberhard Richter; Ch. Hennig; S. Hagedorn; T. Wernicke; G. Tränkle
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Paper Abstract

The availability of GaN substrates is crucial for GaN-based laser diodes. Also high performance LEDs ask for high quality substrates. Methods for growth of bulk GaN are reviewed with a focus on hydride vapour phase epitaxy (HVPE), which currently is the method used for the production of GaN substrates. Also the ammonothermal approach is briefly discussed. Both approaches still have to overcome limitations before mass-production at affordable prices is feasible. These limitations are related to the maximum growth rate yielding high quality material as well as the boule length that can be achieved together with high material quality.

Paper Details

Date Published: 13 February 2008
PDF: 10 pages
Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 69100I (13 February 2008); doi: 10.1117/12.764405
Show Author Affiliations
Markus Weyers, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Eberhard Richter, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
Ch. Hennig, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
S. Hagedorn, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
T. Wernicke, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)
G. Tränkle, Ferdinand-Braun-Institut für Höchstfrequenztechnik (Germany)


Published in SPIE Proceedings Vol. 6910:
Light-Emitting Diodes: Research, Manufacturing, and Applications XII
Klaus P. Streubel; Heonsu Jeon, Editor(s)

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