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Proceedings Paper

ErxY2-xSiO5 nanocrystal and thin film for high gain per length material
Author(s): Kiseok Suh; Heeyoung Go; Shin-Young Lee; Jee Soo Chang; Moon-Seung Yang; Jung H. Shin
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Paper Abstract

We report on fabricating ErxY2-xSiO5 nanocrystals using ErCl3•6H2O and YCl3•6H2O solutions and Si nanowires grown by VSL method. Use of crystalline host allows incorporation of up to 25 at % Er without clustering and loss of optical activity, and use of Y enables continuous mixing of Er and Y for controlling cooperative upconversion. We obtain a cooperative upconversion coefficients of (2.2±1.1)×10-18 cm3/s and (5.4±2.7)×10-18 cm3/s at an Er concentration of 1.2×1021 cm-3 and 2.0×1021 cm-3, respectively. These values are up to 10 times lower at 10 times higher Er concentration than those reported for Er-doped silica, and shows that up to 69 dB/cm gain could be achieved for ultra-compact optical amplification. Also, we report on the deposition of ErxY2-xSiO5 thin film on Si substrate using ion beam sputter deposition. Rapid thermal annealing at 1100°C is enough to form crystal phase the film and activate most of Er3+ ions.

Paper Details

Date Published: 12 February 2008
PDF: 8 pages
Proc. SPIE 6897, Optoelectronic Integrated Circuits X, 68970G (12 February 2008); doi: 10.1117/12.764400
Show Author Affiliations
Kiseok Suh, Korea Advanced Institute of Science and Technology (South Korea)
Heeyoung Go, Korea Advanced Institute of Science and Technology (South Korea)
Shin-Young Lee, Korea Advanced Institute of Science and Technology (South Korea)
Jee Soo Chang, Korea Advanced Institute of Science and Technology (South Korea)
Moon-Seung Yang, Korea Advanced Institute of Science and Technology (South Korea)
Jung H. Shin, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 6897:
Optoelectronic Integrated Circuits X
Louay A. Eldada; El-Hang Lee, Editor(s)

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