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Proceedings Paper

GaN Schottky barrier and metal-semiconductor-metal photodetectors with in situ SiNx nano-network
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Paper Abstract

In this paper, we investigated Schottky and metal-semiconductor-metal (MSM) photodetector structures fabricated on GaN templates with in situ SiNx nanonetwork, which were shown to reduce the dislocation densities significantly in the overgrown material. The GaN layers were grown by metalorganic chemical vapor deposition. The peak responsivity of the Schottky photodetectors on templates with SiNx nanonetwork was measured to be 0.16 A/W, significantly larger than that for the control samples (0.09 A/W). The MSM photodetectors on templates with SiNx nanonetwork also showed significantly enhanced photoresponsivity (100 A/W) when compared to the control sample without any SiNx (30 A/W) and photoconductive gain. The improvement in the photoresponsivity in both Schottky and MSM photodetector structures with the use of SiNx nanonetwork is due to the reduction of dislocation densities.

Paper Details

Date Published: 15 February 2008
PDF: 5 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941S (15 February 2008); doi: 10.1117/12.764245
Show Author Affiliations
J. Xie, Virginia Commonwealth Univ. (United States)
J. Mateo, Virginia Commonwealth Univ. (United States)
Ü. Özgür, Virginia Commonwealth Univ. (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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