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Proceedings Paper

Mid-IR photoluminescence and lasing of chromium doped II-VI quantum dots
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Paper Abstract

Here we report a new method for transition-metal (TM) doped II-VI Quantum Dots (QD) fabrication and first mid-IR (2-3 μm) lasing at 77K of Cr2+:ZnS QD powder (~ 27 nm grain size). Cr2+:ZnS nanocrystalline dots (NCDs) were prepared using laser ablation. The mid-IR photoluminescence (PL) and lasing were studied. The dependence of PL spectrum profile on pump energy demonstrated a threshold behavior accompanied by the appearance of a sharp stimulated emission band around 2230 nm. The stimulated emission band is shifted to the longer wavelength with respect to the spontaneous emission and corresponds to the peak of the Cr:ZnS gain spectrum. This was also accompanied by a considerable lifetime shortening.

Paper Details

Date Published: 14 February 2008
PDF: 5 pages
Proc. SPIE 6879, Photon Processing in Microelectronics and Photonics VII, 68791G (14 February 2008); doi: 10.1117/12.764210
Show Author Affiliations
D. V. Martyshkin, Univ. of Alabama at Birmingham (United States)
C. Kim, Univ. of Alabama at Birmingham (United States)
I. S. Moskalev, Univ. of Alabama at Birmingham (United States)
V. V. Fedorov, Univ. of Alabama at Birmingham (United States)
S. B. Mirov, Univ. of Alabama at Birmingham (United States)


Published in SPIE Proceedings Vol. 6879:
Photon Processing in Microelectronics and Photonics VII
David B. Geohegan; Frank Träger; Jan J. Dubowski; Andrew S. Holmes; Michel Meunier; Craig B. Arnold; Hiroyuki Niino, Editor(s)

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