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Proceedings Paper

Room-temperature mid-infrared Cr2+:ZnSe and Cr2+:ZnS random powder lasers
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Paper Abstract

We report a simple method for fabricating transition metal (TM) doped II-VI powders with average size of about 10- 20μm as well as room temperature mid-infrared (2-3 μm) random lasing based on Cr2+-doped ZnSe and ZnS powders prepared without crystal growth stage under optical intra-shell excitation of chromium. Fabrication of Cr2+-doped ZnSe and ZnS powders involved two simple stages. At the first stage, pure ZnSe, (ZnS) and CrSe, (CrS) (with a concentration of Cr2+ ion 2×10-19 cm-3 and 5 × 10-19 cm-3 for ZnSe and ZnS respectively) chemicals with an average grain size of 10μm were uniformly mixed by means of a mechanical shaker. At the second stage the obtained ZnSe/CrSe mixture was sealed into evacuated (~10-4 Torr) quartz ampoule and annealed either at 1200°C for 15 minute, or 1000°C for 3 days. In the case of ZnS/CrS mixtures the annealing was performed in evacuated quartz ampoule at 1000 °C for 14 days. After annealing, under 1560 nm excitation, the powders demonstrated room temperature middle-infrared luminescence of Cr2+ similar to Cr2+ emission in bulk ZnSe and ZnS. Moreover, the output-input characteristic clearly demonstrated the threshold-like behavior of the output signal with the threshold pump energy density of ~44.5 mJ/cm2 ~7.46 mJ/cm2, and 63.6 mJ/cm2 for Cr:ZnSe annealed for 15 min, 3 days, and Cr:ZnS respectively.

Paper Details

Date Published: 13 March 2008
PDF: 8 pages
Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 68712R (13 March 2008); doi: 10.1117/12.764176
Show Author Affiliations
C. Kim, Univ. of Alabama at Birmingham (United States)
D. V. Martyshkin, Univ. of Alabama at Birmingham (United States)
V. V. Fedorov, Univ. of Alabama at Birmingham (United States)
S. B. Mirov, Univ. of Alabama at Birmingham (United States)


Published in SPIE Proceedings Vol. 6871:
Solid State Lasers XVII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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