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Proceedings Paper

Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO2 / polystyrene microlens arrays
Author(s): Yik-Khoon Ee; Pisist Kumnorkaew; Hua Tong; Ronald A. Arif; James F. Gilchrist; Nelson Tansu
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Paper Abstract

We demonstrated and analyzed 480-nm emitting III-Nitride LEDs using SiO2/polystyrene (PS) microlens arrays, deposited via rapid-convective-deposition. Output power of MOCVD-grown InGaN QW LEDs with SiO2/PS microlens exhibited improvement of 219%. Numerical simulation of the light extraction efficiency optimization of III-Nitride LEDs with SiO2/PS microlens was carried out using Monte Carlo ray tracing including 3D self-consistent photon-carrier interaction. The light extraction efficiency of the LEDs with microlens array is optimized for the PS layer thickness and the SiO2 microspheres diameter. The simulations show good agreement with experiments, indicating the use of SiO2/PS microlens leads to increased photon escape cone.

Paper Details

Date Published: 13 February 2008
PDF: 8 pages
Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 69100M (13 February 2008); doi: 10.1117/12.763973
Show Author Affiliations
Yik-Khoon Ee, Lehigh Univ. (United States)
Pisist Kumnorkaew, Lehigh Univ. (United States)
Hua Tong, Lehigh Univ. (United States)
Ronald A. Arif, Lehigh Univ. (United States)
James F. Gilchrist, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 6910:
Light-Emitting Diodes: Research, Manufacturing, and Applications XII
Klaus P. Streubel; Heonsu Jeon, Editor(s)

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