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Proceedings Paper

Epitaxial lateral overgrowth of (11¯00) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition
Author(s): X. Ni; Ü. Özgür; S. Chevtchenko; J. Nie; H. Morkoç; R. P. Devaty; W. J. Choyke
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Paper Abstract

Planar m-plane GaN was grown on (11¯00) m-plane 6H-SiC substrates using high-temperature AlN nucleation layers by metalorganic chemical vapor deposition. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) images showed striated features on the sample surface aligned along the GaN [11¯20] direction, which are perpendicular to those associated with a-plane (11¯20) GaN. The epitaxial relationship between the m-GaN and 6H-SiC was analyzed using high-resolution x-ray diffraction (XRD). In order to reduce the defect density, epitaxial lateral overgrowth (ELO) was carried out on an m-GaN template with mask stripes along the GaN [11¯20] direction, which makes the lateral growth fronts advance along the GaN c-axis. On-axis XRD rocking curves show that the full width at half maximum (FWHM) values for the ELO samples were reduced by nearly half when compared to those of the m-plane template without ELO. Clear atomic steps were observed in the wing regions by AFM. The absence of the striated features that are associated with the template could be indicative of the reduction of basal stacking faults in the ELO wings. Lowtemperature photoluminescence (PL) spectra showed an excitonic emission at 3.47eV, a basal stacking fault (BSF)- related emission at 3.41 eV, and other defect-related emissions at 3.29 eV and 3.34 eV. For exact notation please see manuscript

Paper Details

Date Published: 28 February 2008
PDF: 5 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 689420 (28 February 2008); doi: 10.1117/12.763848
Show Author Affiliations
X. Ni, Virginia Commonwealth Univ. (United States)
Ü. Özgür, Virginia Commonwealth Univ. (United States)
S. Chevtchenko, Virginia Commonwealth Univ. (United States)
J. Nie, Virginia Commonwealth Univ. (United States)
H. Morkoç, Virginia Commonwealth Univ. (United States)
R. P. Devaty, Univ. of Pittsburgh (United States)
W. J. Choyke, Univ. of Pittsburgh (United States)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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