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Proceedings Paper

AlGaAsSb/InGaAsSb photovoltaic transistors and high-efficiency solar cell with nano-antenna structures
Author(s): Chunchen Lin; Nikolai Faleev; Dennis Prather
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Paper Abstract

We present a new design of high sensitivity, multi-spectral capability AlGaAsSb/InGaAsSb phototransistors for infrared sensing and solar energy conversion applications. These devices are grown by molecular beam epitaxy (MBE), which exhibit high responsivity at room-temperature. The 50% cutoff wavelength of spectral photoresponse is 2.2 μm. Similar structures are also investigated for solar cell applications. The possibility of increasing the solar energy conversion is explored by incorporating nano-antenna array into the solar cell. The broad-band nano-antenna is designed using Ansoft HFSS. The results indicate high solar energy conversion can be achieved for highly efficiency, flexible, lightweight solar power generations for the applications such as aircraft, airbase and special operations.

Paper Details

Date Published: 22 February 2008
PDF: 6 pages
Proc. SPIE 6890, Optical Components and Materials V, 68900D (22 February 2008); doi: 10.1117/12.763847
Show Author Affiliations
Chunchen Lin, Univ. of Delaware (United States)
Nikolai Faleev, Univ. of Delaware (United States)
Dennis Prather, Univ. of Delaware (United States)


Published in SPIE Proceedings Vol. 6890:
Optical Components and Materials V
Michel J. F. Digonnet; Shibin Jiang; John W. Glesener; J. Christopher Dries, Editor(s)

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