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Proceedings Paper

Status of GaN HEMT performance and reliability
Author(s): Daniel S. Green; J. D. Brown; R. Vetury; S. Lee; S. R. Gibb; K. Krishnamurthy; M. J. Poulton; J. Martin; J. B. Shealy
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Paper Abstract

This report will focus on the status of GaN HEMT based amplifier technology development at RFMD. This technology is based around GaN on semi-insulating SiC substrates for optimal thermal performance. RFMD's 0.5μm gate technology features high performance advanced field plate structures, including a unit power cell producing high gain (21dB), high power density (3-5W/mm at 28V) and high efficiency (65-70 percent) at cellular frequencies. We will report on transistor and module performance relevant to applications ranging from high power, high bandwidth amplifiers, to switches and ICs for radar, electronic warfare, cellular infrastructure and homeland security. Additionally, we will report on reliability results that demonstrate capability for dependable, high voltage operation.

Paper Details

Date Published: 6 February 2008
PDF: 8 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941M (6 February 2008); doi: 10.1117/12.763781
Show Author Affiliations
Daniel S. Green, RF Micro Devices, Inc. (United States)
J. D. Brown, RF Micro Devices, Inc. (United States)
R. Vetury, RF Micro Devices, Inc. (United States)
S. Lee, RF Micro Devices, Inc. (United States)
S. R. Gibb, RF Micro Devices, Inc. (United States)
K. Krishnamurthy, RF Micro Devices, Inc. (United States)
M. J. Poulton, RF Micro Devices, Inc. (United States)
J. Martin, RF Micro Devices, Inc. (United States)
J. B. Shealy, RF Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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