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Proceedings Paper

Proposal for (110) InAs/GaSb superlattices for infrared detection
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Paper Abstract

This paper discusses the potential attributes of (110)-grown InAs/GaSb superlattices for infrared detection applications. In comparison to (001)-grown structures, (110) SLs will be thinner, have higher mobilities, diffusion lengths, quantum efficiencies, and gains. Unless growth issues arise, they should also have higher minority carrier lifetimes, higher responsivities, lower noise, and higher detectivities. The first 8x8 envelope-function approximation calculation for a (110)-oriented structure shows the bands to be slightly anisotropic and the oscillator strengths to be polarization dependent. Layer widths for specific absorption thresholds were calculated.

Paper Details

Date Published: 1 February 2008
PDF: 10 pages
Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69000L (1 February 2008); doi: 10.1117/12.763738
Show Author Affiliations
F. Szmulowicz, Univ. of Dayton Research Institute (United States)
H. J. Haugan, Universal Technology Corp. (United States)
G. J. Brown, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 6900:
Quantum Sensing and Nanophotonic Devices V
Rengarajan Sudharsanan; Christopher Jelen, Editor(s)

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