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Proceedings Paper

Comparison of various gate dielectrics on the performance of AlGaN/GaN HFETS
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Paper Abstract

We report a comparison of various gate dielectrics including SiO2, Si3N4, ZrO2 and Pb(Zr, Ti)O3 (PZT) on AlGaN/GaN heterojunction field-effect transistors, deposited by PECVD, MBE, and sputtering respectively. In terms of I-V characteristics, maximum drain-source current could be enhanced under positive gate voltage and the reverse leakage current level decreases by orders of magnitude. In terms of DC measurements, very thin SiO2 layers can improve performance, which may be due to the passivation effect to remove surface states. No significant difference exists between control and the Si3N4 and ZrO2 samples. Slightly reduction in transconduction is observed on the sample with PZT probably because of the much thicker layer was utilized. The thickness of insulator layers examined from C-V measurements reveals a better crystal quality can be obtained by PECVD deposition. While the RF S-parameters measurements shows the PZT gate dielectric brings the highest cut-off frequency or the lowest gate capacitance confirmed also by C-V data, which makes it a better candidate for microwave applications.

Paper Details

Date Published: 28 February 2008
PDF: 8 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 689426 (28 February 2008); doi: 10.1117/12.763688
Show Author Affiliations
Qian Fan, Virginia Commonwealth Univ. (United States)
Jacob H. Leach, Virginia Commonwealth Univ. (United States)
Mo Wu, Virginia Commonwealth Univ. (United States)
Bo Xiao, Virginia Commonwealth Univ. (United States)
Xing Gu, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)
Peter H. Handel, Univ. of Missouri, St. Louis (United States)

Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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