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Proceedings Paper

Interface roughness estimate from carrier transport in InAs/GaSb superlattices
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Paper Abstract

The performance of infrared focal plane arrays and quantum cascade lasers manufactured from InAs/GaSb type- II superlattices (SLs) depends on the mobility of carriers along the growth axis. In turn, the longitudinal mobility depends on the quality of SL interfaces. In-plane transport is a sensitive measure of interface quality and the degree of interface roughness scattering (IRS). In this paper, we demonstrate the IRS-limited transport regime in InAs/GaSb SL samples grown for this study. We find that the in-plane mobility μ as a function of InAs layer width L behaves as μ ∝ L5 , which closely follows the classic sixth power dependence expected from theory. Fits to the mobility data indicate that, for one monolayer surface roughness, the roughness correlation length is about 35 Å.

Paper Details

Date Published: 1 February 2008
PDF: 9 pages
Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69000P (1 February 2008); doi: 10.1117/12.763630
Show Author Affiliations
F. Szmulowicz, Univ. of Dayton Research Institute (United States)
S. Elhamri, Univ. of Dayton (United States)
H. J. Haugan, Universal Technology Corp. (United States)
G. J. Brown, Air Force Research Lab. (United States)
W. C. Mitchel, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 6900:
Quantum Sensing and Nanophotonic Devices V
Rengarajan Sudharsanan; Christopher Jelen, Editor(s)

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