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Proceedings Paper

VECSEL subcavity design and optimization for targeted wavelengths
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Paper Abstract

Optically pumped semiconductor (OPS) vertical-external-cavity surface-emitting lasers (VECSELs) offer the first truly high-brightness high power laser sources with serious power scaling potential to multiple kW levels and flexible spectral coverage from IR to mid-IR. Due to the fact that the semiconductor chip (or subcavity) of a VECSEL serves as both the gain medium and a cavity mirror, the design and optimization of the semiconductor subcavity is key to achieve high power operation and consequently high power extraction via pump area scaling. A fundamental microscopic quantum design approach, allowing for calculating the electro-optical properties of QWs such as the optical gain/absorption and carrier recombination rates, is combined with a coupled optical-thermal-carrier analysis scheme to design and optimize VECSEL chips for wavelengths in the IR. We will describe the design and optimization procedure and present simulation results on VECSEL chips at wavelengths of 980 nm, 1178 nm, and 2 μm.

Paper Details

Date Published: 5 March 2008
PDF: 8 pages
Proc. SPIE 6871, Solid State Lasers XVII: Technology and Devices, 687110 (5 March 2008); doi: 10.1117/12.763620
Show Author Affiliations
Hongbo Li, College of Optical Sciences, Univ. of Arizona (United States)
Jörg Hader, College of Optical Sciences, Univ. of Arizona (United States)
Nonlinear Control Strategies (United States)
Jerome V. Moloney, College of Optical Sciences, Univ. of Arizona (United States)
Nonlinear Control Strategies (United States)
Stephan W. Koch, Univ. of Marburg (Germany)


Published in SPIE Proceedings Vol. 6871:
Solid State Lasers XVII: Technology and Devices
W. Andrew Clarkson; Norman Hodgson; Ramesh K. Shori, Editor(s)

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