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Proceedings Paper

The role of anisotropy for defect properties in a-plane GaN
Author(s): R. Kröger; T. Paskova
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Paper Abstract

Defect formation in wurtzite a-plane gallium nitride grown on r-plane sapphire has been studied using transmission electron microscopy. The observed defect pattern grown along the [11-20] direction shows significant differences compared to films grown along the [0001] direction. Predominant line defects identified in the a-plane GaN are Frank-Shockley partial dislocations bounding basal plane stacking faults and originating at the film/substrate interface. In order to understand the impact of the anisotropic elastic properties of the wurtzite structure on the dislocation formation and the stress around the dislocations anisotropic plane strain elasticity theory was applied and compared with results obtained from isotropic theory calculations. Furthermore, dislocation properties were calculated for AlN and InN. It was found that the line energy found for InN amounts only to about one third of the values obtained for GaN and AlN.

Paper Details

Date Published: 15 February 2008
PDF: 5 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 689403 (15 February 2008); doi: 10.1117/12.763596
Show Author Affiliations
R. Kröger, Univ. of York (United Kingdom)
T. Paskova, Kyma Technologies Inc. (United States)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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