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Proceedings Paper

Band coupling model of electron and hole mediated ferromagnetism in semiconductors: the case of GaN
Author(s): Su-Huai Wei; Gustavo M. Dalpian
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Paper Abstract

Transition metal (TM) doped diluted magnetic semiconductors (DMSs) have many unique physical properties that can be used for magneto-optical and spintronic applications. The DMSs exhibit a wide range of magnetic ordering behavior. For example, Mn doped GaN can be either ferromagnetic or antiferromagnetic, depending on the Mn concentration, carrier density, or pressure. A unified band coupling model based on the p-d and d-d level repulsions between the TM and host elements are developed to explain the hole-induced ferromagnetism. We show that kinetic s-d coupling can be introduced through chemical ordering and strain, thus leading to electron-mediated ferromagnetism. Moreover, by using rare-earth elements (e.g., Gd) as magnetic dopants, the symmetry-allowed s-f coupling can also lead to a large splitting at the conduction band edge, producing electron-mediated ferromagnetism. Our model, therefore, provides a simple guideline for future band structure engineering of magnetic semiconductors.

Paper Details

Date Published: 15 February 2008
PDF: 11 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68940L (15 February 2008); doi: 10.1117/12.763494
Show Author Affiliations
Su-Huai Wei, National Renewable Energy Lab. (United States)
Gustavo M. Dalpian, National Renewable Energy Lab. (United States)
Univ. Federal do ABC (Brazil)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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