Share Email Print

Proceedings Paper

Band coupling model of electron and hole mediated ferromagnetism in semiconductors: the case of GaN
Author(s): Su-Huai Wei; Gustavo M. Dalpian
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Transition metal (TM) doped diluted magnetic semiconductors (DMSs) have many unique physical properties that can be used for magneto-optical and spintronic applications. The DMSs exhibit a wide range of magnetic ordering behavior. For example, Mn doped GaN can be either ferromagnetic or antiferromagnetic, depending on the Mn concentration, carrier density, or pressure. A unified band coupling model based on the p-d and d-d level repulsions between the TM and host elements are developed to explain the hole-induced ferromagnetism. We show that kinetic s-d coupling can be introduced through chemical ordering and strain, thus leading to electron-mediated ferromagnetism. Moreover, by using rare-earth elements (e.g., Gd) as magnetic dopants, the symmetry-allowed s-f coupling can also lead to a large splitting at the conduction band edge, producing electron-mediated ferromagnetism. Our model, therefore, provides a simple guideline for future band structure engineering of magnetic semiconductors.

Paper Details

Date Published: 15 February 2008
PDF: 11 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68940L (15 February 2008); doi: 10.1117/12.763494
Show Author Affiliations
Su-Huai Wei, National Renewable Energy Lab. (United States)
Gustavo M. Dalpian, National Renewable Energy Lab. (United States)
Univ. Federal do ABC (Brazil)

Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

© SPIE. Terms of Use
Back to Top