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Proceedings Paper

Advances in high-brightness semiconductor lasers
Author(s): M. L. Osowski; W. Hu; R. M. Lammert; S. W. Oh; P. T. Rudy; T. Stakelon; J. E. Ungar
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Paper Abstract

We present recent advances in high power multimode and single semiconductor lasers. We review high power operation with increased spectral brightness using on-chip internal gratings and increased spatial brightness at wavelengths from the near infrared to the eye-safe regime. New high power, high brightness fiber coupled semiconductor lasers are described.

Paper Details

Date Published: 13 February 2008
PDF: 7 pages
Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68761E (13 February 2008); doi: 10.1117/12.763434
Show Author Affiliations
M. L. Osowski, QPC Lasers, Inc. (United States)
W. Hu, QPC Lasers, Inc. (United States)
R. M. Lammert, QPC Lasers, Inc. (United States)
S. W. Oh, QPC Lasers, Inc. (United States)
P. T. Rudy, QPC Lasers, Inc. (United States)
T. Stakelon, QPC Lasers, Inc. (United States)
J. E. Ungar, QPC Lasers, Inc. (United States)


Published in SPIE Proceedings Vol. 6876:
High-Power Diode Laser Technology and Applications VI
Mark S. Zediker, Editor(s)

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