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Proceedings Paper

GaN-based light emitting diodes with large area surface nano-structures patterned by anodic aluminum oxide templates
Author(s): Tao Dai; Bei Zhang; Xiangning Kang; Kui Bao; Wenzhu Zhao; Dongshen Xu; Zizhao Gan
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Paper Abstract

We demonstrate a manufacturing approach of nanostructures on the large surface area of GaN-based LED chip to improve the light extraction efficiency. We prepared the nanoporous anodic aluminum oxide (AAO) template on an aluminum foil by the conventional two-step anodization. Using the AAO template as etching mask, we successfully transferred the nanoporous structures to the surfaces of GaN-based LEDs by inductively coupled plasma dry etching. About a quarter of two-inch GaN-based LED chip was patterned by the nanostructures. The pore spacing was modulated from 100 nm to 400 nm. The improvement of light extraction efficiency of the device was achieved. A light output power enhancement of 42% was obtained from the p-side surface nanopatterned LEDs compared to the conventional LEDs on the same wafer at 20 mA. This approach offers a potential technique of nanostructures fabrication on GaNbased LEDs with the advantages of large area, rapid process and low cost.

Paper Details

Date Published: 13 February 2008
PDF: 8 pages
Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 69100P (13 February 2008); doi: 10.1117/12.763416
Show Author Affiliations
Tao Dai, Peking Univ. (China)
Bei Zhang, Peking Univ. (China)
Xiangning Kang, Peking Univ. (China)
Kui Bao, Peking Univ. (China)
Wenzhu Zhao, Peking Univ. (China)
Dongshen Xu, Peking Univ. (China)
Zizhao Gan, Peking Univ. (China)

Published in SPIE Proceedings Vol. 6910:
Light-Emitting Diodes: Research, Manufacturing, and Applications XII
Klaus P. Streubel; Heonsu Jeon, Editor(s)

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